دیتاشیت BSP52T1G
مشخصات دیتاشیت
| نام دیتاشیت |
BSP52T1,T3
|
| حجم فایل |
135.741
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi BSP52T1G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
800mW
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Transition frequency (fT):
-
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DC current gain (hFE@Vce,Ic):
2000@10V,500mA
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Collector-emitter voltage (Vceo):
80V
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Collector cut-off current (Icbo@Vcb):
10uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
1.3V@500mA,500uA
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Package:
SOT-223
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
1A
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Voltage - Collector Emitter Breakdown (Max):
80V
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Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500µA, 500mA
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Current - Collector Cutoff (Max):
10µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
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Power - Max:
800mW
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
TO-261-4, TO-261AA
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Supplier Device Package:
SOT-223
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Base Part Number:
BSP52
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detail:
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 800mW Surface Mount SOT-223
